Criteria & Assumptions¶
Process Stack Diagram¶
Details about the layers can be found in SkyWater GDS Layers Information page.
General¶
Parameter |
Units |
Value |
Variable name |
||
---|---|---|---|---|---|
Space to Draw |
S8 |
||||
Grid Size - Drawn |
um |
0.005 |
GSF |
||
Approximate Scale Factor for R32 data |
0.3 |
sfr32 |
Minimum Critical Dimensions¶
Layer Name |
Feature Size |
Space Size |
Feature Name |
Space Name |
|
---|---|---|---|---|---|
Field Oxide |
0.14 |
0.27 |
FOMCD |
FOMCDSP |
|
Deep N-Well |
3 |
6.3 |
DNMCD |
DNMCDSP |
|
P-Well Block Mask |
0.84 |
1.27 |
PWBMCD |
PWBMCDSP |
|
P-Well Drain Extended |
0.84 |
1.27 |
PWDEMCD |
PWDEMCDSP |
|
N-Well |
0.84 |
1.27 |
NWMCD |
NWMCDSP |
|
High Vt PCh |
0.38 |
0.38 |
HVTPMCD |
HVTPMCDSP |
|
Low Vt Nch |
0.38 |
0.38 |
LVTNMCD |
LVTNMCDSP |
|
HLow VT PCh Radio |
0.38 |
0.38 |
HVTRMCD |
HVTRMCDSP |
|
N-Core Implant |
0.38 |
0.38 |
NCMCD |
NCMCDSP |
|
Tunnel Mask |
0.41 |
0.5 |
TUNMCD |
TUNMCDSP |
|
ONO Mask |
0.41 |
0.5 |
ONOMCD |
ONOMCDSP |
|
Low Voltage Oxide |
0.6 |
0.7 |
LVOMCD |
LVOMCDSPCSMC |
|
Resistor Protect |
1.27 |
0.84 |
RPMCD |
RPMCDSP |
|
Poly 1 |
Endcap/Gap |
0.15 |
0.21 |
P1G |
|
Poly 1 |
N/A |
0.14 |
P1MCD |
P1MCDSP |
|
N-tip Implant |
0.84 |
0.7 |
NTMCD |
NTMCDSP |
|
High Volt. N-tip |
0.7 |
0.7 |
HVNTMCD |
HVNTMCDSP |
|
Lightly Doped N-tip |
0.7 |
0.7 |
LDNTMCD |
LDNTMCDSP |
|
Nitride Poly Cut |
0.27 |
0.27 |
NPCMCD |
NPCMCDSP |
|
P+ Implant |
0.38 |
0.38 |
PSDMCD |
PSDMCDSP |
|
N+ Implant |
0.38 |
0.38 |
NSDMCD |
NSDMCDSP |
|
Local Intr Cont.1 |
Slotted |
0.17 |
0.17 |
LICM1SLCD |
LICM1SLCDSP |
Local Intr Cont.1 |
Core |
0.19 |
0.35 |
LICM1CD |
LICM1CDSP |
Local Intrcnct 1 |
Core |
0.14 |
0.14 |
LI1MCD |
LI1MCDSP |
Local Intrcnct 1 |
0.17 |
0.17 |
LI1MCD |
LI1MCDSP |
|
Contact |
0.17 |
0.19 |
CTM1CD |
CTM1CDSP |
|
Open Frame Mask |
N/A |
N/A |
OFMCD |
OFMCDSP |
|
Metal 1 |
0.14 |
0.14 |
MM1CD |
MM1CDSP |
|
Metal 1 - Cu |
0.14 |
0.14 |
MM1_CuCD |
MM1_CuCDSP |
|
Via |
0.15 |
0.17 |
VIMCD |
VIMCDSP |
|
Via - Cu |
0.18 |
0.13 |
VIM_CuCD |
VIM_CuCDSP |
|
Capacitor MiM |
2 |
0.84 |
CAPMCD |
CAPMCDSP |
|
Metal 2 |
0.14 |
0.14 |
MM2CD |
MM2CDSP |
|
Metal 2 - Cu |
0.14 |
0.14 |
MM2_CuCD |
MM2_CuCDSP |
|
Via 2-TNV |
0.28 |
0.28 |
VIM2CD |
VIM2CDSP |
|
Via 2-S8TM |
0.8 |
0.8 |
VIM2CD |
VIM2CDSP |
|
Via 2-PLM |
0.2 |
0.2 |
VIM2CD |
VIM2CDSP |
|
Via 2-Cu |
0.21 |
0.18 |
VIM2_CuCD |
VIM2_CuCDSP |
|
Metal 3-TLM |
0.36 |
0.36 |
MM3CD |
MM3CDSP |
|
Metal 3-S8TM |
0.8 |
0.8 |
MM3CD |
MM3CDSP |
|
Metal 3-PLM |
0.3 |
0.3 |
MM3CD |
MM3CDSP |
|
Metal 3-Cu |
0.3 |
0.3 |
MM3_CuCD |
MM3_CuCDSP |
|
Pad Via |
1.2 |
1.27 |
VIPDMCD |
VIPDMCDSP |
|
Via3-PLM |
0.2 |
0.2 |
VIM3CD |
VIM3CDSP |
|
Via3-Cu |
0.21 |
0.18 |
VIM3_CuCD |
VIM3_CuCDSP |
|
Inductor-TLM |
2.5 |
2.5 |
INDMCD |
INDMCDSP |
|
Metal 4 |
0.3 |
0.3 |
MM4CD |
MM4CDSP |
|
Metal 4-Cu |
0.3 |
0.3 |
MM4_CuCD |
MM4_CuCDSP |
|
Via4 |
0.8 |
0.8 |
VIM4CD |
VIM4CDSP |
|
Metal 5 |
All flows except S8PF*/S8PIR* |
0.8 |
0.8 |
MM5CD |
MM5CDSP |
Metal 5 |
S8PF*/S8PIR* |
1.6 |
1.6 |
MM5CD |
MM5CDSP |
Nitride Seal Mask |
3 |
4 |
NSMCD |
NSMCDSP |
|
Pad (scribe protect) |
2 |
1.27 |
PDMCD |
PDMCDSP |
|
Polyimide |
5 |
15 |
PMMCD |
PMMCDSP |
|
Polyimide_ExtFab |
5 |
15 |
PMM[E]CD |
PMM[E]CDSP |
|
DECA PBO |
10 |
10 |
PBOCD |
PBOCDSP |
|
Cu Inductor/Redist. |
20 |
20 |
CU1MCD |
CU1MCDSP |
|
Serifs |
0.1 |
0.1 |
SERCD |
SERCDSP |
Semiconductor Criteria¶
Basic Parameters¶
Units |
Value |
Variable name |
|
---|---|---|---|
n-well peak concentration |
cm-3 |
6.00E+017 |
NWPCONC |
background concentration |
cm-3 |
8.00E+14 |
NWBCONC |
y.char |
um |
0.43 |
NWYCHAR |
desired Nmin/Ns ratio |
0.9 |
NMINNSRATIO |
|
min n-well width to guarantee 90 % peak concentr. |
um |
0.55 |
MINNWWID |
p-well peak concentration |
cm-3 |
4E+017 |
PWPCONC |
p-well peak coordinate |
um |
0.42 |
PWPCOORD |
y.char |
um |
0.13 |
PWYCHAR |
min. p-well width to guarantee 90 % peak concentr. |
um |
0.33 |
MINPWWID |
Junction Depths¶
Units |
Vertical Feature |
Vertical Space |
Variable name |
|
---|---|---|---|---|
Baseline: N-Well |
um |
1.1 |
NWVDIM |
|
P-Well |
um |
0.75 |
PWVDIM |
|
N-w/P-w junction (from drawn edge) |
um |
0.034 |
WELLJCT |
|
N+ or P+ S/D (XJ) |
um |
0.1 |
0.06 |
JCTD / LD |
Max (N+ or P+ S/D outdiff.) next to isol. edge |
um |
0.007 |
LDST |
|
Max (N+ or P+ S/D outdiff.) next to isol. edge for 6 V reg. devices |
0.05 |
LDST5 |
||
N Tip (As) |
um |
0.01 |
LDNTIP |
Other Width Criteria¶
Units |
Value |
Variable name |
|
---|---|---|---|
Min. diff/tap width for reproducible resistivity |
um |
0.12 |
MINFWR |
Min. width to open a strip of tap between two diffs |
um |
0.34 |
SDM3 |
Max s/d diff width without contact, consistent w/Ram4,5,6 |
um |
5.7 |
XMAXCON |
Punchthrough Criteria¶
Units |
Value |
Variable name |
|
---|---|---|---|
n-well - n-well |
um |
0.835 |
NWPTS |
n+ - n+ or p+-p+ |
um |
0.23 |
DPTS |
p+ in nwell to pwell |
um |
0.05 |
PPTS |
n+ in pwell to nwell |
um |
0.15 |
PNPTS |
Physical Criteria¶
Material Thicknesses |
Value (um) |
Variable name |
|||
---|---|---|---|---|---|
field oxide (above silicon surface) … underneath poly |
0.07 |
FOXSTEP |
|||
min. etch and fill capability for isolation, licon, and met1 |
0.15 |
DEFC |
|||
min. etch and fill capability for mcon |
0.14 |
CEFC |
|||
min. etch and fill capability for via |
0.18 |
VEFC |
|||
poly cap after SPE |
0.2 |
OVGTTH |
|||
poly thickness |
0.18 |
POLYTH |
|||
oxide spacer |
0.05 |
SpThickn |
|||
Pre-LI ILD thickness |
0.5 |
ILDTHICKN |
|||
Licon1 etch angle (deg) |
10 |
LICETANG |
|||
Standard Licon bottom CD |
0.08 |
LBCD |
|||
Mcon enclosure by Li |
0 |
mconLiEnclosure |
|||
Via1 slope |
0.02 |
Via1Slope |
|||
Oxide Bias for MM1 |
0.6 |
BiasMM1 |
|||
Oxide Bias for MM2 |
0.6 |
BiasMM2 |
|||
Oxide Bias for MM3 |
1.15 |
BiasMM3 |
|||
Oxide Bias for MM4 |
1.15 |
BiasMM4 |
|||
LI1 thickness for antenna ratio calculations |
0.1 |
LiThick |
|||
Metal 1 thickness for antenna ratio calculations (S8D*) |
0.35 |
Met1Thick |
|||
Metal 2 thickness for antenna ratio calculations (S8D*) |
0.35 |
Met2Thick |
|||
Inductor thickness for antenna ratio calculation (S8D*) |
4 |
IndmThick |
|||
Metal 3 thickness for antenna ratio calculation (S8Q/SP8Q) |
0.8 |
Met3thick_q |
|||
Metal4 thickness for antenna ratio calculation (S8Q*/SP8Q) |
2 |
Met4Thick_q |
|||
Metal 3 thickness for antenna ratio calculation (S8P*/SP8P*) |
0.8 |
Met3thick_p |
|||
Metal4 thickness for antenna ratio calculation (S8P*/SP8P*) |
0.8 |
Met4Thick_p |
|||
Metal5 thickness for antenna ratio calculation (S8P*/SP8P* with 2um thick metal) |
2 |
Met5Thick_p |
|||
Metal5 thickness for antenna ratio calculation (S8P*/SP8P* with 1.2um thick metal) |
1.2 |
Met5Thickp_12 |
|||
Metal 2 thickness for antenna ratio calculations (SP8T/S8T*) |
0.35 |
Met2_Qthick |
|||
Metal 3 thickness for antenna ratio calculations (S8T* other than S8TM*) |
0.85 |
Met3_Qthick |
|||
Metal 3 thickness for antenna ratio calculations (S8TM* flow) |
2 |
Met3_TMthick |
|||
Metal 3 thickness for antenna ratio calculations (SP8T flow) |
0.8 |
Met3_SP8Tthick |
|||
Photoresist thickness |
1.14 |
PRTHICKN |
|||
Photoresist thickness for HV Tip Implants |
0.3 |
PrThickImplant |
|||
Min width of tip implant opening |
0.1 |
minTip_impW |
|||
NTM shadowing |
0.16 |
ntmShadowing |
|||
HVNTM shadowing |
0.232 |
hvntmShadowing |
|||
HVPTM shadowing |
0.089 |
hvptmShadowing |
|||
pseudo-shadowing |
0.045 |
pseudoShadowing |
|||
Channel length for low Vt PMOS |
0.35 |
lvtpmos_poly |
|||
Width of the Low Leakage gate on each side of LowVt Pmos connected to power rails (requirement based on exp data) |
0.28 |
LvtEnc_forPowerRail |
|||
CD tolerance for PDM (3s) |
1 |
PdmCD_tol |
|||
Min process bias 3s tolerance |
0.032 |
PHTOL |
|||
Min process bias 3s tolerance for poly |
0.02 |
PHP1TOL |
|||
Minimum Space and Overlap |
Value (um) |
Variable name |
|||
Minimum mcon overlap onto LI for reproducible contact resistance |
0.12 |
TCONOVLP |
|||
Dogbone PR decay length (SRS 8/4/99) |
0.2 |
DBPRDEC |
|||
Bowing of rectangular contact (per edge) – seal ring sizing |
0.015 |
TBOWINGSEAL |
|||
Waffling / Pattern Density |
Value |
Variable name |
|||
S8 average FOM PD (extractions from logic device) |
0.45 |
FOMPDAVG |
|||
Size of small PD extraction box for rough tolerance (um) |
700 |
SMALLPDBOX |
|||
Size of large PD extraction box for rough tolerance (um) |
2000 |
LARGEPDBOX |
|||
Min pattern density for oxide |
0.75 |
OxideMinPD |
|||
Min MM* PD range |
0.3 |
MMPDrange |
|||
FOM 700um box PD tolerance for CMP (SOI8 PCR2) for all technologies |
0.15 |
FOM700TOL |
|||
Stepping box shift as a percent of box size |
0.5 |
BOXSHIFT |
|||
Maximum metal waffle drop pattern density in the frame |
0.55 |
PD_FrameWP |
|||
Window size for frame waffle drop PD check |
100 |
WP_PDWINDOW |
|||
Step size for frame waffle drop PD check |
10 |
WP_PDSTEP |
|||
Other |
Value |
Variable name |
|||
Poly resistor width and spacing to reduce CD variation (um) |
0.33 |
POLYRCD |
|||
Poly resistor width and spacing to reduce CD variation (um) |
0.48 |
POLYRSPC |
|||
Spacing between slotted_licons (Not applicable when the two edges L= 0.19um) |
0.51 |
LICM1SLSP1 |
|||
Precision resistor width to accommodate 6 contacts across |
2.03 |
PRECRESW |
|||
Li resistor width (to drop one Licon w/o dogbones) |
0.29 |
LIRESCD |
|||
Correction factor for spacing to a wide metal line |
2 |
BIGMF |
|||
Min spacing for created dnwell to pnp.dg (more restrictive than dnwell.4 rule) |
5 |
cdnwPnpSpc |
|||
Min spacing between nwell and deep nwell on separate nets (Taken from dnwell.3 from S4* TDR *N plus rounded up, IGK request.) |
6 |
nwellDnwellSpc |
|||
Min space between deep nwells used as photo diode (um) |
5 |
PDDnwSpc |
|||
Min space between dnwell (used for photo diode and other deep nwell (um) |
5.3 |
PDDnwSpc1 |
|||
Min/Max width of nwell inside deep nwell (for photo diodes) |
0.84 |
PDNwmCD |
|||
Min/Max enclosure of nwell by deep nwell (for photo diode) |
1.08 |
PDNwmDnwEnc |
|||
Min/Max width of tap inside deep nwell (for photo diode) |
0.41 |
PDTapCD |
|||
Min/Max enclosure of tap by nwell inside deep nwell (for photo diode) |
0.215 |
PDTapNwmEnc |
Laser Fuse Criteria¶
Value (um) |
Variable name |
||||
---|---|---|---|---|---|
Min. spac. of laser spot to diffused junction to ensure jct integrity |
0.6 |
XLASJUN |
|||
Max. width of a metal fuse line that can be removed reliably |
0.8 |
FSW |
|||
Min. L of met. fuse at which damage doesn’t extend beyond ends |
6.605 |
FSLE |
|||
Max. extension of met2 beyond fuse boundary |
0.005 |
FEXT |
|||
Min. distance between laser spot and active junction |
0.545 |
LASJCT |
|||
Standard contact bottom CD |
0.09 |
||||
Positioning tolerance of laser spot (3 s) |
0.3 |
LASMA |
|||
Nominal effective laser spot diameter |
3.5 |
LASSPT |
|||
Max. increase in spot diameter at max. distance from focus (3 s) |
0.9 |
LASCDTOL |
|||
Fuse melting radius |
3.6 |
MELTRAD |
|||
Melting related crack size in ILD |
0.36 |
FUSECRACK |
|||
Min space between fuse and any feature not connected to it |
0.2 |
MinFuseSpace |
|||
Space between fuse and any unrelated layer |
0.5 |
SP_fuse_to_unrelated |
|||
DC offset in some fuse rules |
0.87 |
LASDC1 |
Other criteria and parameters¶
Layer / Design rule |
CD |
space |
Comment |
||
---|---|---|---|---|---|
MOSFET width |
0.135 |
FOMSE |
|||
MOSFET width in standard cells |
0.075 |
FOMSESC |
|||
Spacing of poly on field to diff |
0.065 |
PFDSE |
|||
Spacing of poly on field to tap |
0.005 |
PFTSE |
|||
Enclosure of tap by nwell for pwell res |
0.22 |
PTAP_NWL_SP |
|||
Grid conversion rounding factor |
0.005 |
GRCF |
|||
Licon enclosure rounding |
0.02 |
LICENCLR |
|||
LI1CD add/drop |
0.01 |
0.04 |
|||
Huge metal X min. W and L |
3 |
HugeM |
|||
Min Nsdm area |
0.265 |
MinNsdmArea |
|||
Min Psdm area |
0.255 |
MinPsdmArea |
|||
Min N/Psdm hole area |
0.265 |
MinNPsdmHole |
|||
Large waffle size must be divisible by 4 |
7.2 |
waffle_large |
|||
P1M additional CD control |
0.011 |
P1MCDcontrol |
|||
Li1 proximity correction |
0.25 |
LI1PROXSpace |
|||
Serif added to nwell convex corner (SXX-572, 573) |
0.22 |
NwellCvxSerif |
|||
Serif added to nwell concave corner (SXX-572, 573) |
0.12 |
NwellCveSerif |
|||
NWM extension beyond nwell edge straddling de_nFet_source (for GSMC; QZM-133) |
0.075 |
NvhvNwellExt |
|||
Min enclosure of pad by pmm for Cu inductor (JNET-80) |
0 |
padPMMEncInd |
|||
Min enclosure of pmm by cu1m for Cu inductor (JNET-80) |
10.75 |
pmmCu1mEncInd |
|||
Min enclosure of pbo by cu1m per DECA 000348 Rev S |
10 |
pboCu1mEnc |
|||
Min enclosure of pmm by pmm2 for radio flow in the die (JNET-80) |
13 |
pmmPmm2EncInd |
|||
Min enclosure of pmm by pmm2 inside frame |
7.5 |
pmmPmm2EncIndFrame |
|||
Min space between pmm2 and Inductor.dg |
7.5 |
pmm2IndSpc |
|||
Min cu1m PD across full chip |
0.35 |
MinCU1Mpd |
|||
Max cu1m PD across full chip |
0.45 |
MaxCU1Mpd |
|||
Spacing between RDL and outer edge of seal ring |
15 |
RdlSealSpc |
|||
Spacing between RDL and pmm2 |
6.16 |
RdlPmm2Spc |
|||
Enclosure of etest module in die by cpmm2 |
0 |
EtestCpmm2Enc |
|||
Keepout of active, poly, li and metal to NSM (TCS-2253) |
1 |
NSMKeepout |
|||
3 um keepout of active, poly, li and metal to areaid.dt/areaid.ft (TCS-2253) |
3 |
NSMKeepout_3um |
|||
pnp_emitter sizing (S8P GSMC flow) |
0.05 |
PnpEmitterSzGSMC |
|||
pnp_emitter sizing (other flows) |
0.03 |
PnpEmitterSz |
|||
MiM Capacitor aspect ration |
20 |
MiM_AR |
|||
Min NCM space to be used to preserve NCM CL algorithm (avoid LVL error) |
1.27 |
NCM_0LVL |
|||
Min space of NCM between core and periphery due to existing layout restriction |
0.96 |
NcmCorePeriSP |
|||
Multiplication factor |
0.01 |
S8LVconv |
|||
Minimum scribe width |
50 |
scribew |
|||
spacing of p-well outside deep n-well to deep n-well mask edge |
0.12 |
NWDNWENCL |
|||
p-well in deep n-well to p-sub |
1.2 |
NWDNWOL |
|||
Field oxide etchback after P1ME before implants |
0.04 |
WFDEL |
Criteria for High Voltage FET¶
Layer / Design rule |
CD |
space |
Comment |
||
---|---|---|---|---|---|
Min HVNwell to any nwell space |
2 |
HVNwell_Nwell_SP |
|||
Min HVDiff width |
0.29 |
HVDiff_CD |
|||
Min HVDiff space |
0.3 |
HVDiff_SP |
|||
Min HV Pmos gate width |
0.5 |
HVP_gate_CD |
|||
Min space between HV poly |
0.28 |
HVPoly_SP |
|||
Min HV Nmos gate width |
0.37 |
HVPoly_CD |
|||
HV P+ Diff enclosure by Nwell |
0.33 |
HVPdiff_nwell_enc |
|||
HV N+ diff space to Nwell |
0.43 |
HVNdiff_nwell_SP |
|||
HV N+ tap enclosure by Nwell |
0.33 |
HVNtap_nwell_enc |
|||
HV P+tap space to Nwell |
0.43 |
HVPtap_nwell_SP |
|||
Photoresist tilted implant penetration |
0.02 |
HVPrPenetration |
|||
Photoresist tilted implant blocking distance |
0.013 |
HVPrBlocking |
|||
Min size of HVTip |
0.1 |
HVTipMinSize |
|||
Extra CD tol for HVNTM to match Ram7 process |
0.015 |
HVNTMExtraCdTol |
|||
Min HVDiff resistor width |
0.29 |
HVDiff_Res_CD |
|||
High voltage n+-n+ or p+-p+ |
0.3 |
HVDPTS15 |
|||
HV MOSFET channel length |
0.5 |
HVPCD |
Criteria for polyimide manufacturability¶
Layer / Design rule |
CD |
space |
Comment |
||
---|---|---|---|---|---|
Enclosure of fuses by polyimide |
12 |
PimFuseEnc |
|||
Enclosure of bondpad by polyimide (YUY-165) |
0.5 |
PimPadEnc |
|||
Enclosure of pad:dg by PBO inside inductor capture pad, with DECA online monitoring |
4.5 |
PBOPadEnc |
|||
Enclosure of pad:dg by PBO per standard DECA rules |
7.5 |
PBOPadEncDECA |
|||
DECA PBO drawn-to-final process bias per side |
0.5 |
PBOProcBiasPerSide |
|||
Polyimide CD tolerance |
1 |
PimCD_tol |
|||
Min Pim width over pad openings |
87 |
PimOverPad_CD |
|||
Polyimide slope (001-87400) |
5.3 |
I_polyimide_slope |
|||
Enclosure of polyimide by polymer tolerance |
7.7 |
Po_po_tol |
|||
Min/Max enclosure of pad.dg inside M5RDL by pmm |
0 |
pmmM5RDLpadEnc |
|||
Min spacing of pmm to (rdl NOT (pad.dg sized by 0.5)) |
19.16 |
pmmRDLspc |
|||
Enclosure of laser targets in the die by polyimide |
30 |
PimLaserEnc |
Criteria for VPP capacitor¶
Layer / Design rule |
CD |
space |
Comment |
||
---|---|---|---|---|---|
Min width of capacitor:dg |
4.38 |
VppWidth |
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Max width of unit capacitor:dg |
8.58 |
VppMaxWidth |
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Min spacing between two capacitor:dg |
1.5 |
VppSpc |
|||
Min spacing of capacitor:dg to li1 or met1 or met2 or nwell |
1.5 |
VppOtherSPc |
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Min enclosure of capacitor by nwell |
1.5 |
VppNwmEnc |
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Min spacing of pmm to (rdl NOT (pad.dg sized by 0.5)) |
19.16 |
pmmRDLspc |